PART |
Description |
Maker |
CY7C1515AV18-200BZXI CY7C1526AV18-278BZXC CY7C1526 |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165 8M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884 |
2Mx36 & 4Mx18 QDR II b4 SRAM 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
71P74604S167BQG8 P74804S200BQ8 |
512K X 36 QDR SRAM, 0.5 ns, PBGA165 13 X 15 MM, 1 MM PITCH, GREEN, FBGA-165 1M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
CY7C1426AV18 |
36-Mbit QDR-II SRAM 4-Word Burst Architecture(4字Burst结构,36-Mbit QDR-II SRAM)
|
Cypress Semiconductor Corp.
|
IDT71P74104S167BQ IDT71P74804S250BQ IDT71P74604S20 |
18Mb Pipelined QDR II SRAM Burst of 4 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDR II SRAM Burst of 4 1M X 18 QDR SRAM, 0.45 ns, PBGA165 18Mb Pipelined QDR II SRAM Burst of 4 512K X 36 QDR SRAM, 0.45 ns, PBGA165 18Mb Pipelined QDR II SRAM Burst of 4 2M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
|
K7Q161854A-FC16 K7Q163654A-FC20 K7Q161854A-FC20 K7 |
1M X 18 QDR SRAM, 3 ns, PBGA165 512Kx36-bit, 1Mx18-bit QDR SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1514V18 CY7C1514V18-200BZC CY7C1514V18-250BZC |
72-Mbit QDR-II?SRAM 2-Word Burst Architecture 72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture 72-MBIT QDR-II⒙ SRAM 2-WORD BURST ARCHITECTURE 72-Mbit QDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
CY7C1314BV18-167BZXC |
18-Mbit QDRII SRAM 2 Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1911BV18-278BZXC CY7C1911BV18-278BZXI CY7C1911 |
18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 8 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 18 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1510V18-167BZXC CY7C1510V18-167BZXI CY7C1514V1 |
72-Mbit QDR-II垄芒 SRAM 2-Word Burst Architecture 72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|